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| TetraFET D1016UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 23 1 A D G E 54 F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN J K I N M O * SUITABLE FOR BROAD BAND APPLICATIONS * VERY LOW Crss * USEFUL PO AT 1GHz * LOW NOISE DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45 D 6.35 E 3.30 F 14.22 G 1.27 x 45 H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45 0.250 0.130 0.560 0.05 x 45 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 100W 70V 20V 5A -65 to 150C 200C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.12/00 D1016UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 40W VDS = 28V f = 400MHz IDQ = 0.4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.8 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70 Typ. Max. Unit V 1 1 7 mA mA V S dB % -- TOTAL DEVICE h VSWR Ciss Coss Crss PER SIDE VDS = 28V VDS = 28V 60 30 2.5 pF pF pF Reverse Transfer Capacitance VDS = 28V * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 1.75C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.12/00 D1016UK 60 50 40 Pout W 80 70 60 50 % D r a in E ffic ie n c y 60 50 40 Pout W 18 16 14 12 f = 400M H z Id q = 0 .4 A Vds = 28V G a in dB 30 20 f 30 20 10 0 0 6 10 0 0 = 400M H z Id q = 0 .4 A Vds = 28V 40 30 20 10 8 2 4 P in 6 W 8 10 Pout D r a in E ffic ie n c y 12 2 4 P in 6 W 8 10 Pout G a in 12 Figure 1 Power Output and efficiency vs. Power Input. Figure 2 Power Output and Gain vs. Power Input. 0 -1 0 -2 0 IM D 3 dBc OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 400MHZ = f2 = Id q = Vds = f1 400M H z 4 0 0 .1 M H z 0 .4 A 28V ZS -3 0 -4 0 -5 0 -6 0 0 W ZL W 10.7 - j35.4 13.8 - j22.2 10 20 Pout 30 W PEP 40 IM D 3 50 60 Figure 3 IMD Vs. Output Power. Typical S Parameters ! # !Freq !MHz 100 200 300 400 500 600 700 800 900 1000 VDS = 28V, IDQ = 1A MHZ S MA R 50 S11 mag 0.767 0.813 0.841 0.861 0.882 0.902 0.923 0.912 0.923 0.923 ang -135 -153 -161 -169 -175 180 174 170 164 161 S21 mag 22.646 10.116 5.623 3.548 2.820 2.093 1.365 1.096 0.902 0.724 ang 88 57 39 25 20 14 9 2 -3 -4 S12 mag 0.0155 0.0099 0.0076 0.0130 0.0210 0.0285 0.0376 0.0457 0.0484 0.0596 ang 9 4 49 79 78 78 77 66 66 64 S22 mag 0.531 0.692 0.794 0.841 0.875 0.910 0.944 0.944 0.933 0.944 ang -103 -131 -143 -151 -156 -161 -166 -170 -176 -177 Prelim.12/00 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk D1016UK L2 39 B IA S 100nF 30pF L1 10K 10K 620pF T6 T2 T4 T8 30pF 100nF 10uF +28V 620pF T10 1 -3 .5 p F T1 IN P U T 2 -1 8 p F 620pF T3 2 -1 8 p F D 1016U K OUTPUT D 1016U K T9 620pF T7 T5 TEST FIXTURE Substrate 1.6mm FR4 All microstrip lines W = 2.5mm T1 T2, T3 T4, T5 T6, T7 T8, T9 T10 L1 L2 45mm 50 OHM UT34 semi-rigid coax 55mm 50 OHM UT 34 semi-rigid coax 25mm microstrip line 10mm microstrip line 45mm 25 OHM UT 34-25 semi-rigid coax 60mm 50OHM UT34 semi-rigid coax 4 turns 19swg enamelled copper wire, 7mm i.d. 2.5 turns of 19swg enamelled copper wire on T50-6 ferrite toroid Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.12/00 |
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